Eris

Professional Discrete Semiconductor Manufacturer

Eris Technology Corporation was established 1995 in Taiwan. The company is an ODM (original design manufacturer) providing a variety of support services to design, manufacturing, and after-marketing services for diode products. Eris constantly focuses on the innovation of R&D based on their practical attitude and efficient management, providing high quality and good value products with competitive prices and excellent services to all clients. 

Product Portfolio

Their busniess scope comprises Schottky-, Zener- & TVS-Diodes, Bridge Rectifiers, inked Wafers, etc.

Suitable Applications

  • Electronics in general
  • Industrial electronics
  • Consumer electronics
  • Automotive electronics
  • Power supplies

Certifications and quality management

  • ISO 9001:2015
  • ISO 14001:2015
  • ISO 45001:2018
  • IATF 16949:2016

There are 10 of 1451 products shown.

P3MBC011

  • Package: PPAK3X3
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 30 / -30
  • RDS(ON) @10V [mΩ]: 11 / 22
  • RDS(ON) @4,5V [mΩ]: 17,6 / 32
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 30 / -20
  • Manufacturer: Eris
P3MBC011

P3MBC013A

  • Package: PPAK3X3
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 30 / -30
  • RDS(ON) @10V [mΩ]: 13 / 25
  • RDS(ON) @4,5V [mΩ]: 16 / 38
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 28 / -19,7
  • Manufacturer: Eris
P3MBC013A

P3MBC020A

  • Package: PPAK3X3
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 30 / -30
  • RDS(ON) @10V [mΩ]: 20 / 50
  • RDS(ON) @4,5V [mΩ]: 30 / 75
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 12 / -8
  • Manufacturer: Eris
P3MBC020A

P3MNB012

  • Package: PPAK3X3
  • Configuration: Dual
  • MOSFET Type: N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 12
  • VGS max, [V]: ±10
  • ID @T=25°C [A]: 30
  • Manufacturer: Eris
P3MNB012

P3MNB022

  • Package: PPAK3X3
  • Configuration: Com. Dual
  • MOSFET Type: N+N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 22
  • VGS max, [V]: ±8
  • ID @T=25°C [A]: 6
  • Manufacturer: Eris
P3MNB022

P3MNC010

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 10
  • RDS(ON) @4,5V [mΩ]: 13.8
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 38
  • Manufacturer: Eris
P3MNC010

P3MNC011A

  • Package: PPAK3X3
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 11
  • RDS(ON) @4,5V [mΩ]: 15
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 42
  • Manufacturer: Eris
P3MNC011A

P3MNC012

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 12
  • RDS(ON) @4,5V [mΩ]: 18
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 35
  • Manufacturer: Eris
P3MNC012

P3MNC012A

  • Package: PPAK3X3
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 12
  • RDS(ON) @4,5V [mΩ]: 16
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 42
  • Manufacturer: Eris
P3MNC012A

P3MNC013

  • Package: PPAK3X3
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 13
  • RDS(ON) @4,5V [mΩ]: 18
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 35
  • Manufacturer: Eris
P3MNC013