RF-Switch

Nisshinbo Micro Devices provides RF switches that cover various communication applications such as 5G, Wi-Fi 6/6E and so on. The advantages of high performance switches are low insertion loss, high isolation and high linearity even if high frequency band by our unique GaAs process. Furthermore, integrated ESD protection elements achieve excellent ESD robustness.They also offer automotive grade products. In addition, Nisshinbo develop RF devices by SOI process.

There are 10 of 86 products shown.

NJG1695ME7

  • Package (RF-Switch): QFN18
  • Features: X-SP4T Switch, High Isolation
  • P-1dB [dBm]: 23
  • Insertion Loss [dB]: 0,45@1,0GHz 0,55@2,0GHz 0,80@2,7GHz
  • Isolation [dB]: 43@1,0GHz* 38@2,0GHz* 35@2,7GHz*
  • Manufacturer: Nisshinbo
NJG1695ME7

NJG1802K51

  • Package (RF-Switch): QFN12
  • Features: SPDT Switch
  • P-1dB [dBm]: 36
  • Insertion Loss [dB]: 0,18@0,9GHz 0,20@1,9GHz 0,23@2,7GHz
  • Isolation [dB]: 50@0,9GHz 38@1,9GHz 33@2,7GHz
  • Manufacturer: Nisshinbo
NJG1802K51

NJG1812AMET-A Automotive

  • Package (RF-Switch): QFN12
  • Features: DPDT Switch
  • P-1dB [dBm]: 36
  • Insertion Loss [dB]: 0,25@900MHz 0,35@1900MHz 0,45@2700MHz
  • Isolation [dB]: 25@900MHz 20@1900MHz 17@2700MHz
  • Manufacturer: Nisshinbo
NJG1812AMET-A Automotive

NJG1809ME7

  • Package (RF-Switch): QFN18
  • Features: SP4T Switch
  • P-1dB [dBm]: 32
  • Insertion Loss [dB]: 0,4@2,7GHz 0,4@3,5GHz 0,5@5,85GHz
  • Isolation [dB]: 27@2,7GHz 25@3,5GHz 30@5,85GHz
  • Manufacturer: Nisshinbo
NJG1809ME7

NT1819NAAE2S

  • Features: Absorptive High Isolation SPDT Switch
  • P-1dB [dBm]: 31
  • Insertion Loss [dB]: Typ. 0.70/0.80/0.85/0.90/1.2 dB @0.7/3.85/4.7/6.0/7.125 GHz
  • Isolation [dB]: Typ. 70/62/60/55/51 dB @ 0.7/3.85/4.7/6.0/7.125 GHz
  • Manufacturer: Nisshinbo
NT1819NAAE2S

NT1822GVAE1S

  • Package (RF-Switch): DFN6
  • Features: 1.0 to 7.125 GHz High Isolation SPDT Switch
  • P-1dB [dBm]: 31
  • Insertion Loss [dB]: 0.60 dB@2.4 to 2.5 GHz
  • Isolation [dB]: Typ. 40 dB@2.4 to 2.5 GHz
  • Manufacturer: Nisshinbo
NT1822GVAE1S

SGM11106C

  • Package (RF-Switch): QFN14
  • Features: SP6T LTE Switch with MIPI RFFE Interface
  • P-1dB [dBm]: 27
  • Insertion Loss [dB]: 0,65@2,7GHz
  • Isolation [dB]: 20@2,7GHz
  • Manufacturer: SG Micro
SGM11106C

SGM11104S

  • Package (RF-Switch): LGA14
  • Features: High Isolation SP4T RF Switch
  • P-1dB [dBm]: 30
  • Insertion Loss [dB]: 0,49@2,7GHz
  • Isolation [dB]: 46@2,7GHz
  • Manufacturer: SG Micro
SGM11104S

SGM11210M

  • Package (RF-Switch): LGA18
  • Features: DP10T Diversity Switch with MIPI RFFE for Carrier Aggregation
  • P-1dB [dBm]: 25
  • Insertion Loss [dB]: 0,6@2,7GHz
  • Isolation [dB]: 26@2,7GHz
  • Manufacturer: SG Micro
SGM11210M

SGM12033A

  • Package (RF-Switch): LGA16
  • Features: 3P3T MIPI RFFE High Power Switch
  • P-1dB [dBm]: 38
  • Insertion Loss [dB]: 0,72@2,7GHz
  • Isolation [dB]: 41@2,7GHz
  • Manufacturer: SG Micro
SGM12033A
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