MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 393 products shown.

D2MNT033

  • Package: TO-263 (D2-PAK)
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 250
  • RDS(ON) @10V [mΩ]: 33
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 60
  • Manufacturer: Eris
D2MNT033

D2MPD035

  • Package: TO-263 (D2-PAK)
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -40
  • RDS(ON) @10V [mΩ]: 35
  • RDS(ON) @4,5V [mΩ]: 60
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -25
  • Manufacturer: Eris
D2MPD035

D7MBD032

  • Package: TO-252-4L
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 40 / -40
  • RDS(ON) @10V [mΩ]: 32 / 40
  • RDS(ON) @4,5V [mΩ]: 42 / 52
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 15 / -12
  • Manufacturer: Eris
D7MBD032

ER3909

  • Package: SOP-8
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -30
  • RDS(ON) @10V [mΩ]: 30
  • RDS(ON) @4,5V [mΩ]: 55
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -7
  • Manufacturer: Eris
ER3909

I2MNAA190

  • Package: TO-220F
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 600
  • RDS(ON) @10V [mΩ]: 190
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 13
  • Manufacturer: Eris
I2MNAA190

I2MNAA380

  • Package: TO-220F
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 600
  • RDS(ON) @10V [mΩ]: 380
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 9.1
  • Manufacturer: Eris
I2MNAA380

I2MNAB120

  • Package: TO-220F
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 650
  • RDS(ON) @10V [mΩ]: 120
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 19.3
  • Manufacturer: Eris
I2MNAB120

I2MNAB12H

  • Package: TO-220F
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 650
  • RDS(ON) @10V [mΩ]: 1200
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 7
  • Manufacturer: Eris
I2MNAB12H

I2MNAB13H

  • Package: TO-220F
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 650
  • RDS(ON) @10V [mΩ]: 1300
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 7
  • Manufacturer: Eris
I2MNAB13H

I2MNAB190

  • Package: TO-220F
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 650
  • RDS(ON) @10V [mΩ]: 190
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 16.5
  • Manufacturer: Eris
I2MNAB190
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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