MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 393 products shown.

TTMNB300

  • Package: SOT-563
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 300
  • VGS max, [V]: ±8
  • ID @T=25°C [A]: 0.8
  • Manufacturer: Eris
TTMNB300

TUMBB350

  • Package: SOT-363
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 20 / -20
  • RDS(ON) @10V [mΩ]: 350 / 600
  • RDS(ON) @4,5V [mΩ]: 350
  • VGS max, [V]: ±8
  • ID @T=25°C [A]: 0,72 / -0,53
  • Manufacturer: Eris
TUMBB350

TUMNB300

  • Package: SOT-363
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 300
  • VGS max, [V]: ±8
  • ID @T=25°C [A]: 0.8
  • Manufacturer: Eris
TUMNB300

TUMNC450

  • Package: SOT-363
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 30
  • RDS(ON) @4,5V [mΩ]: 450
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: 0.8
  • Manufacturer: Eris
TUMNC450

TUMNF16H

  • Package: SOT-363
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 55
  • RDS(ON) @10V [mΩ]: 1.6
  • RDS(ON) @4,5V [mΩ]: 2.5
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 0.36
  • Manufacturer: Eris
TUMNF16H

TUMNG30H

  • Package: SOT-363
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 3000
  • RDS(ON) @4,5V [mΩ]: 4000
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 0.3
  • Manufacturer: Eris
TUMNG30H

TVMNB220

  • Package: SOT-883
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 220
  • VGS max, [V]: ±8
  • ID @T=25°C [A]: 0.7
  • Manufacturer: Eris
TVMNB220

TVMNB350

  • Package: SOT-883
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 350
  • VGS max, [V]: ±8
  • ID @T=25°C [A]: 0.5
  • Manufacturer: Eris
TVMNB350

TVMNC560

  • Package: SOT-883
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @4,5V [mΩ]: 560
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: 0.4
  • Manufacturer: Eris
TVMNC560

TVMNG30H

  • Package: SOT-883
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 3000
  • RDS(ON) @4,5V [mΩ]: 4000
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 0.3
  • Manufacturer: Eris
TVMNG30H
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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