MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 393 products shown.

S8MND5P8

  • Package: SOP-8
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 40
  • RDS(ON) @10V [mΩ]: 5.8
  • RDS(ON) @4,5V [mΩ]: 7.8
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 12
  • Manufacturer: Eris
S8MND5P8

S8MNG030

  • Package: SOP-8
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 30
  • RDS(ON) @4,5V [mΩ]: 38
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 5
  • Manufacturer: Eris
S8MNG030

S8MNG040

  • Package: SOP-8
  • Configuration: Dual
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 40
  • RDS(ON) @4,5V [mΩ]: 47
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 4.5
  • Manufacturer: Eris
S8MNG040

S8MNG050

  • Package: SOP-8
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 50
  • RDS(ON) @4,5V [mΩ]: 60
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 5.5
  • Manufacturer: Eris
S8MNG050

S8MNG050A

  • Package: SOP-8
  • Configuration: Dual
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 50
  • RDS(ON) @4,5V [mΩ]: 60
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 5.2
  • Manufacturer: Eris
S8MNG050A

S8MNG054

  • Package: SOP-8
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 54
  • RDS(ON) @4,5V [mΩ]: 63
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 4.5
  • Manufacturer: Eris
S8MNG054

S8MNM020

  • Package: SOP-8
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 20
  • RDS(ON) @4,5V [mΩ]: 26
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 18
  • Manufacturer: Eris
S8MNM020

S8MNM024

  • Package: SOP-8
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 24
  • RDS(ON) @4,5V [mΩ]: 28
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 8
  • Manufacturer: Eris
S8MNM024

S8MNM025

  • Package: SOP-8
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 25
  • RDS(ON) @4,5V [mΩ]: 30
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 30
  • Manufacturer: Eris
S8MNM025

S8MNM085

  • Package: SOP-8
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 85
  • RDS(ON) @4,5V [mΩ]: 110
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 4
  • Manufacturer: Eris
S8MNM085
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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