MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 393 products shown.

P3MNM018A

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 18
  • RDS(ON) @4,5V [mΩ]: 24
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 42
  • Manufacturer: Eris
P3MNM018A

P3MNM115

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 115
  • RDS(ON) @4,5V [mΩ]: 120
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 10
  • Manufacturer: Eris
P3MNM115

P3MNM9P8

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 9.8
  • RDS(ON) @4,5V [mΩ]: 14
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 48
  • Manufacturer: Eris
P3MNM9P8

P3MPB015

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -20
  • RDS(ON) @4,5V [mΩ]: 15
  • VGS max, [V]: ±10
  • ID @T=25°C [A]: -26
  • Manufacturer: Eris
P3MPB015

P3MPB8P0

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -20
  • RDS(ON) @4,5V [mΩ]: 8
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: -60
  • Manufacturer: Eris
P3MPB8P0

P3MPB9P0

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -20
  • RDS(ON) @4,5V [mΩ]: 9
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: -50
  • Manufacturer: Eris
P3MPB9P0

P3MPC011

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -30
  • RDS(ON) @10V [mΩ]: 11
  • RDS(ON) @4,5V [mΩ]: 15
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -35
  • Manufacturer: Eris
P3MPC011

P3MPC015

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -30
  • RDS(ON) @10V [mΩ]: 15
  • RDS(ON) @4,5V [mΩ]: 25
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -30
  • Manufacturer: Eris
P3MPC015

P3MPC018

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -30
  • RDS(ON) @10V [mΩ]: 18
  • RDS(ON) @4,5V [mΩ]: 28
  • VGS max, [V]: ±25
  • ID @T=25°C [A]: -32
  • Manufacturer: Eris
P3MPC018

P3MPC020

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -30
  • RDS(ON) @10V [mΩ]: 20
  • RDS(ON) @4,5V [mΩ]: 35
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -30
  • Manufacturer: Eris
P3MPC020
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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